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Impact Ionization or Ionization Breakdown Gain and Coefficient Calculator
Semiconductor Type:
Silicon (E-field Range: 0 - 316200 V/cm)
Indium Phosphide (E-field Range: 350000 - 466900 V/cm)
Gallium Arsenide:
Low Doping (E-field Range: 200000 - 326400 V/cm)
Medium Doping (E-field Range: 200000 - 325100 V/cm)
High Doping (E-field Range: 200000 - 333600 V/cm)
Voltage:
(V)
Width:
(μm)
a
:
(cm
-1
)
b
:
(cm
-1
)
M
e
, electron gain:
M
h
, hole gain:
Electric Field:
(V/cm)
References:
Silicon:
P.P. Webb,
Measurements of Ionization Coefficients in Silicon at Low Electric Fields
, GE Canada Inc., Electro Optics Operations
W.N. Grant,
Solid State Electronics
, 16, 1189 (1973)
Indium Phosphide:
C. A. Armiento and S. H. Groves,
Applied Physics Letters
, Vol 43, No. 2
Gallium Arsenide:
H. David Law and Charles A. Lee,
Solid-State Electronics
, Vol. 21, pp. 331-340
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