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Cleanroom Equipment List
Itemized list of all equipment we have access to in the BYU Cleanroom Facilities.
Click here for a detailed image map of the equipment layout in our Class 10 Cleanroom Facilities.
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Detailed image map of BYU Class 10 Cleanroom Facilities.
Lithography
Cleanroom equipment used during standard lithographic processes such as photoresist spinning, photoresist baking, lithographic exposure, development, and mask generation.
Application of AZ3330, SU-8, polyimide, and other photoresists.
Application of AZ3330, SU-8, polyimide, and other photoresists.
High-fidelity mask exposure, capable of feature sizes down to .5 microns.
Used to create custom photolithographic masks from a user-specified layout.
Spinnable material application. This spinner is not restricted to photoresist application and may be used for coatings such as spin-on glass, SU8, polyimide, etc. Can also be used for wafer cleaning.
(Under Construction)
(Under Construction)
Film Deposition and Growth
Cleanroom equipment used during standard film deposition and growth procedures such as PECVD (Chemical Vapor Deposition), metal evaporation, and thermal oxidation.
High temperature furnance for wafer thermal oxide growth, wafer dopant diffusion, and metallization annealing.
High temperature deposition of most metals.
Sputtered deposition of various materials including Tungsten, Silicon Nitride, Silicon Dioxide, and Chrome.
Plasma deposition of SiO2, SiOxNy, and Si3N4films. This machine is currently dedicated to producing silicon nitride films.
Plasma deposition of SiO2, SiOxNy, and Si3N4films. This machine is currently dedicated to producing silicon dioxide films.
Plasma deposition of SiO2, SiOxNy, and Si3N4films. This machine is currently dedicated to producing silicon dioxide films.
Multi-boat metal deposition of gold and aluminum.
Annealing and Diffusion
Cleanroom equipment used during standard annealing and diffusion procedures such as rapid thermal annealing, dopant diffusion, and aluminum and nickel annealing.
High temperature furnance for wafer thermal oxide growth, wafer dopant diffusion, and metallization annealing.
Rapid annealing of metal-semiconductor contacts and ion-implanted silicon wafers.
Metrology
Cleanroom equipment used during measurement procedures such as ellipsometry, profilometry, parameter analyzing, reflectometry, and microscopic imaging.
Measures surface and textural properties by creating a composite 3-D image in true color of whatever is being scanned
Highly accurate measuring tool for single or double thickness thin films measurements. Records index of refraction and thickness of various thin films.
Measures the thickness and optical constants of any smooth, transparent or thin film with minimal light absorption
Measures the resistivity of silicon slices using a collinear four point probe array
Semiconductor parameter analyzer used for curve tracing and wafer testing.
Semiconductor parameter analyzer used for curve tracing and wafer testing.
General use microscope equipped with 5x, 10x, 20x, 50x, and 100x objective lenses. Equipped with a digital camera linked to a computer for recording observations.
The Metricon Prism Coupler allows for wafer measurements without an initial knowledge of the thickness. It allows for high accuracy measurements of many materials and substrates.
Reflectometry system to measure thickness of silicon dioxide, silicon nitride, photoresist and other films with a small spot size.
PCI eXtensions for Instrumentation (PXI) is a PC-based platform that offers a high-performance solution for measurement and automation systems. Currently the primary use for this parameter analyzer is to measure and analyze transistors on wafers.
Probe stations are used to make contact to microscopic features on a device
Surface height profile measurement of microscopic features. Capable of producing measurements up to 10 samples/micrometer.
Etching
Cleanroom equipment used during standard wet and dry etching procedures such as aluminum and nickel etching, reactive ion etching (RIE), inductively coupled plasma etching (ICP), KOH etching, and oxygen descum etching.
Reactive Ion Etching using CF4 and O2 chemistries.
Heated area of the wet bench area where KOH etching of Silicon takes place.
O2 plasma etching of thin organic films such as photoresist residue. This system has two parallel plates for a planar etch.
Highly directional inductively coupled plasma etcher for etching silicon.
Highly directional inductively coupled plasma etcher for etching silicon, silicon nitride, silicon dioxide, and metals.
Baking/Curing
Cleanroom equipment used during standard baking and curing procedures such as photoresist baking and curing, dehydration baking, and spin-on glass curing.
Ovens used for curing of various polymers and dehydration of wafers.
Critical point drying is a method of drying wafer structures without collapsing or deforming the structure.
Low-pressure baking oven.
The VAC Glovebox is a controlled atmosphere apparatus. It provides an inert environment for handling highly reactive materials.
(Under Construction)
Polishing, Grinding, and Cleaving
Cleanroom equipment used for grinding, polishing, and cleaving wafers.
The Chemical Mechanical Polisher (CMP) is used to polish 4" (or 6") wafer by using chemical and mechanical polishing method. It can planarize the wafer which has different material.
A Dicing Saw is used to cut(or dice) or groove semiconductor wafer into small square, or die.
The grinder is used to grind a wafer piece into desired thickness.
The purpose of the Ultrapol End & Edge Polisher is to polish the edge of the diced wafer sample
The wirebonder is designed for ultrasonic, thermosonic, or thermocompression wedge bonding of IC's, hybrids, microwave devices, and laser diodes using gold or aluminum wire from .5 mil (12.5 microns) to 3 mil (76 microns) and ribbon.
Ultron UH114 Wafer Tape Applicator is used to prepare the wafer which needs to be diced by a dicing saw machine. The tape will hold the diced wafer so that the wafer dice will not fall off.
(Under Construction)
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