Film Type |
Etchants |
Range |
Al |
Aluminum Etchants TYPE A TYPE D |
at 25°C, at 40°C 30 Å/sec, 40 Å/sec 80 Å/sec, 125 Å/sec |
Al2O3 |
Transetch - N |
120 Å/sec at 180°C |
Cr |
Chromium Etch-473 Chromium Etch-TFD Chromium Etch-1020 |
at 25°C, at 40°C 14 Å/sec, 25 Å/sec --, 50 Å/sec |
Cr-CrO |
Chromium Etch-TFD Chromium Etch-1020 |
Variable Variable |
Cr-Si Cr-SiO |
Chromium Cermet Etchant - TFE |
1000 Å/min at 50°C |
Cu |
Copper Etch 100 Copper Etch 200 APS Copper 100 |
1 mil/min at 50°C .5 mil/min at 50°C 80 Å/sec at 40°C |
GaAs |
Gallium Arsenide |
20 Å/sec to 100 Å/sec |
GaN |
Gallium Nitride |
80 Å/min at 180°C |
Ga2O3 |
Gallium Oxide |
10 SEC. at 25°C |
GaP |
Gallium Phosphide |
A Face(Ga): 115 µ/hr B Face (P): 210 µ/hr,80°C |
Ge |
Germanium |
250 Å/sec at 20°C |
Au |
Gold Etchant TFA |
28 Å/sec at 25°C |
In2O3 |
Indium Oxide |
30 min at 25°C |
InP |
Indium Phosphide |
30 mins at 25°C |
Fe2O3 |
Iron Oxide ME-10 |
50 Å/sec at 25°C |
Mo |
Moly Etchant |
55 Å/sec at 30°C 85 Å/sec at 60°C |
Nb |
Niobium |
50 Å/sec at 25°C |
Ni-Cr |
Nichrome Etch - TFC NIckel Etch TFN |
20 Å/sec at 25°C 50 Å/sec at 40°C |
Ni |
Nickel Etch - TFB NIckel Etch TFG |
30 Å/sec at 25°C 50 Å/sec at 40°C |
Pd |
Palladium Etchant - TFP |
110 Å/sec at 50°C |
Pt |
Platinum Etch 1:1 |
10 Å/sec at 25°C |
Si |
Silicon Slow Etch Silicon Mesa Etch |
Variable Variable |
SiO2 |
Buffer HF (thermally grown) Siloxide Etch (deposited) |
800 Å/min at 25°C 2400 Å/min at 25°C |
SiO |
Silicon Monoxide Etch |
5000 Å/min at 85°C |
Si3N4 |
Transetch - N |
125 Å/min at 180°C |
Ag |
Silver Etchant - TFS |
200 Å/sec at 25°C |
Ta |
Tantalum Etch SIE-8607 |
70 Å/sec at 25°C |
Ti |
Titanium Etchant - TFT |
25 Å/sec at 20°C 50 Å/sec at 30°C |
Ti-W |
Ti-Tungsten Etch TiW-30 |
20 Å/sec |
W |
Tungsten Etch TFW |
140 Å/sec at 30°C |
SnO, ITO |
TE-100 |
30 MIN at 25°C |