Photolithography Chemicals and Materials

This page gives data for the best known processing methods for various adhesion promoters
and photoresists. The methods correspond to a specific use for each photoresist, which can
be found be clicking on the photoresist name.
The photolithography process can be changed to create different features.

List of Photoresists & Manufacturers

Tables of Spin Speed vs Thickness

Basic Photolithography Process for Positive Photoresists

Basic Photolithography Process for Negative Photoresists

Basic Lithography Tutorial

Positive Photoresist Spin Speed/Time Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm²) Developer Develop Time Post-Exposure Bake Temp/Time Minimum Feature Size

AZ 3312 4000rpm/60s 1um 90° C/60s 4-5s AZ300MIF 30-40s 90° C/60s 0.5um

AZ 3330 5000-6000rpm/60s 2um 90° C/60s 8-12s AZ300MIF 30-40s 90° C/60s 1um

Shipley 1.2L 4000rpm/70s 1um 90° C/60s 5-6s Shipley MF-26A 30-40s 115° C/60s 0.5um

Shipley 1.8M 4000rpm/90s 2um 90° C/60s 10-11s Shipley MF-26A 30-40s 115° C/60s 1um

AZ P4620 200rpm/30s,
6000/2s
Clean off back of wafer 9um 70° C/60s,
100° C/4min 60s (soft contact else resist will crack) AZ400K (diluted 1:4, agitate) 2min (repeat exposure/develop steps as many times as necessary) 70° C/5min,
90° C/5min,
110° C/10min -

*Note: No change in exposure time has been observed when using the south aligner with the new filters.

Negative Photoresist Spin Speed/Time Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm²) Post-Exposure Bake Temp/Time Developer Develop Time Minimum Feature Size

nLOF 2020 2750rpm/60s 2um 110° C/60s 7-8s 110° C/60s AZ300MIF 60s 1um

Photodefinables Spin Speed Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm²) Post-Exposure Bake Temp/Time Developer Develop Time Curing Temp/Time Type Asect Ratio

Note: After developing the SU-8, rinse the wafer off with isopropyl alcohol, NOT water!

SU-8 5 Variable 1000 - 6000 6um - 2um 50° C/5min,
65° C/5min,
95° C/5min 20-25s 65° C/5min,
95° C/5min SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative -

SU-8 10 Variable 1000 - 6000 15um - 3um 65° C/10min,
95° C/10min 25-40s 65° C/10min,
95° C/10min SU-8 Developer, gently agitate 90s
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative -

SU-8 25 Variable 1000 - 6000 30um - 5um 50° C/5min,
65° C/5min,
95° C/5min 1min - 45s 65° C/5min,
95° C/5min SU-8 Developer, gently agitate 4-2 mins
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative -

SU-8 3005 Variable 750 - 5000 11um - 3um 65° C/5min,
95° C/5min 20-25s 65° C/5min,
95° C/5min SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative 5:1

SU-8 2000.5 Variable 3000/30s 600nm 65° C/1min,
95° C/3min 6s 65° C/1min,
95° C/4min SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative >10:1

PMGI 500/10s,
1000/30s,
6000/1s ~5um 65° C/1min,
250° C/20min
(Note: Ramp Down) 210s (Deep UV)
60 develop
Repeat until desired removal - AZ300 MIF (repeated)
(Very sensitive to over-development) 60s 120C/60s positive -

*Note: Exposure times for SU8 have increased by about 40% when using the south aligner with the new filters.

Polyimide / Spin-On-Glass Spin Speed Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm²) Post-Exposure Bake Temp/Time Developer Develop Time Curing Temp/Time Type Minimum Feature Size

Honeywell 1513EL 4000 rpm 1.5um - - - - - 200C - -

Adhesion Promoter Process

HMDS Spin@2000rpm 3-5s or until spread; apply before photoresist

Omni-Coat Apply, then spin wafer @ 3000 RPM for 20sec; apply before SU-8

Surpass 3000

Surpass 4000