Oxide Growth Calculator

Thickness Given Time

Initial Thickness:	Ǻ
Temperature:	°C  (700 to 1200)
Crystal Orientation:	100   111
Environment:	Wet   Dry
Oxidation Time:	hrs: mins:
Thickness:	Ǻ

Calculate Time Given a Desired Thickness.

Use an interactive Color Chart to predict the color of Silicon Oxide or Silicon Nitride at a particular thickness.

*Constants taken from a chapter written by B. E. Deal in Semiconductor materials and process technology handbook : for very large scale integration (VLSI) and ultra large scale integration (ULSI) / edited by Gary E. McGuire. (pp. 48-57)

*Equation taken from from B.E. Deal and A. S. Grove, "General Relationship for the Thermal Oxidation of Silicon," J. Appl. Phys., 36, 3770 (1965)

 

 

 

List of Thermal Oxide Physical Constants

Property (units)	Value
Density (g/cm3)	2.27
Dielectric Constant	3.9
DC Resistivity @25°C (Ω-cm)	1016
Energy gap (eV)	~9
Thermal conductivity (W/cm2°C)	0.014
Linear expansion coefficient (ppm/°C)	0.05
Refractive index	1.46
Melting Point (°C)	~1700
Molecular weight	60.08
Molecules/cm3	2.3*1022
Specific heat (J/g°C)	1.0
Film stress (at 25°C) dynes/cm2	2-4 x 1019
IR absorption peak (mm)	9.3
Etch rate BHF (49%) nm/min	100

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