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Energy Gap in III-V Ternary Semiconductors
Select Ternary Alloy
Calculated Parameters
Al
x
In
1-x
P
Al
x
Ga
1-x
As
Al
x
In
1-x
As
Al
x
Ga
1-x
Sb
Al
x
In
1-x
Sb
Ga
x
In
1-x
P
Ga
x
In
1-x
As
Ga
x
In
1-x
Sb
GaP
x
As
1-x
GaAs
x
Sb
1-x
InP
x
As
1-x
InAs
x
Sb
1-x
Direct Energy Gap:
Lattice Constant:
Density:
Dielectric constant (static):
Dielectric constant (high freq.):
Effective mass electron:
hole:
light hole:
Electron affinity:
refractive index (infrared) n:
Piezoelectric constant:
Elastic constant C11:
C12:
C44:
 
* mo = 9.1095x10
-28
g
Move the slider bar or enter a specific x value.
x=
%
Equations used to calculate Direct Energy Gap
Al
x
In
1-x
P
1.34 + 2.23x
Al
x
Ga
1-x
As
1.424 + 1.247 (x<0.45)
1.424 + 1.087x + 0.438x
2
Al
x
In
1-x
As
0.36 + 2.35x + 0.24x
2
Al
x
Ga
1-x
Sb
0.73 + 1.10x + 0.47x
2
Al
x
In
1-x
Sb
0.172 + 1.621x + 0.43x
2
Ga
x
In
1-x
P
1.34 + 0.511x + 0.6043x
2
(0.49
Ga
x
In
1-x
As
0.356 + 0.7x + 0.4x
2
Ga
x
In
1-x
Sb
0.172 + 0.165x + 0.413x
2
GaP
x
As
1-x
1.424 + 1.172x + 0.186x
2
GaAs
x
Sb
1-x
0.73 - 0.5x + 1.2x
2
InP
x
As
1-x
0.356 + 0.675x + 0.32x
2
InAs
x
Sb
1-x
0.18 - 0.41x + 0.58x
2
Source: Swaminathan, V; Macrander, A. T.; Materials Aspects of GaAs and InP based Structures. 1991.
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